A 65nm CMOS 400ns Measurement Delay NBTI-Recovery Sensor by Minimum Assist Circuit

نویسندگان

  • Takashi Matsumoto
  • Hiroaki Makino
  • Kazutoshi Kobayashi
  • Hidetoshi Onodera
چکیده

Designing reliable systems becomes more difficult in recent years. Besides conventional problems such as transistor leakage, degradation and variation of transistor performance have severe impact on the dependability of VLSI systems[1]-[3]. In this paper, we deal with negative bias temperature instability (NBTI) which is one of the strongest reliability concerns for digital and analog CMOS circuits[4]-[14]. Especially, we focus on a sensor circuit design which has high fidelity to NBTI recovery monitoring. In the following, first, we clarify the limitation of NBTI recovery measurement by a single PMOS transistor. Then we describe a NBTI-recovery sensor by minimum assist circuit achieving 400ns measurement delay.

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تاریخ انتشار 2010